Ultra-high purity CO2 laser gas powering the next generation of semiconductor manufacturing — from 7nm to 2nm process nodes.
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EUV (Extreme Ultraviolet) lithography uses high-power CO2 lasers to generate a 13.5 nm wavelength. This technology is crucial for manufacturing advanced semiconductor nodes at and below 7nm — specifically 5nm, 3nm, and increasingly 2nm processes.
A pulsed high-power CO2 laser fires 50,000 pulses per second at tin droplets in a vacuum chamber, creating a plasma that emits EUV light. This light is then used by lithography systems to pattern the world's most advanced microchips.
CO2 laser gas requires up to 99.9999% purity. Hydrocarbons must be <1 ppm, moisture <5 ppm. Any contamination degrades laser performance.
Gas contamination directly affects power output, target wavelength accuracy, and laser tube lifetime. Consistent purity ensures consistent output.
The latest High-NA EUV laser technology (series production 2026) will push to even smaller nodes below 2nm, keeping Moore's Law alive.
| Parameter | Detail |
|---|---|
| Wavelength Generated | 13.5 nm (EUV) |
| Laser Power | 25–40 kW pulsed CO2 |
| Repetition Rate | 50,000 pulses/second |
| Semiconductor Nodes | 7 nm, 5 nm, 3 nm, 2 nm |
| CO2 Purity Required | ≥99.9997% (Grade 5.7+) |
| Hydrocarbons | <1 ppm |
| Moisture | <5 ppm |